Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session B30: Metal-Insulator Transitions: Experiment
11:30 AM–2:18 PM,
Monday, March 6, 2023
Room: Room 222/223
Sponsoring
Unit:
DCMP
Chair: Tika R Kafle, JILA, UCB
Abstract: B30.00009 : Epitaxial strain engineering of a high-entropy oxide
1:06 PM–1:18 PM
Presenter:
RANJAN K PATEL
(Indian Institute of Science Bangalore)
Author:
RANJAN K PATEL
(Indian Institute of Science Bangalore)
Collaboration:
Ranjan Kumar Patel, Nandana Bhattacharya, Prithwijit Mandal, Christoph Klewe, P. Shafer, Zhan, Zhang, Hua Zhou, and S. Middey
demand of the constantly evolving modern technology. High entropy oxides (HEOs) are a class
of materials, containing equimolar portions of five or more transition metal and/or rare-earth
element. HEOs are being explored in recent years to achieve tunable properties in unexplored
parts of the complex phase diagram. However, epitaxial stabilization of such multi-element
system is challenging, and it is unknown how epitaxial strain will affect the electronic and
magnetic behaviour of HEO. We have been able to grow a prototype-HEO
(LaPrNdSmEu)0.2NiO3 in layer-by-layer mode using pulsed laser deposition. Detailed
characterization using x-ray-based methods confirm excellent structural quality of these films.
We have observed that (LaPrNdSmEu)0.2NiO3 film grown under tensile strain exhibit a metalinsulator
transition (MIT). We have found that this transition can be completely suppressed by
compressive strain. Surprisingly, HEO film where the strain is almost negligible, does not
exhibit any MIT. This work firmly demonstrates the symmetry and strain effect of the
substrates on the electronic properties of a high-entropy oxide thin film.
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