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We have investigated the Circular Photogalvanic Effect (CPGE) in the orthorhombic ternary compound, NbIrTe₄. This material has been suggested theoretically as a type-II Weyl semimetal having 8 pairs of Weyl nodes, but no ARPES measurements have been published as yet. Measuring the photoresponse of a device fabricated from a thin film of this material (~100 nm thickness) under (0.3-1) eV illumination using a quarter-wave plate, reveals a clear energy dependent CPGE, increasing by as the photon energy approaches the Fermi energy. On top of this broad increase, there exists an energy resonance for the CPGE signal at ~0.6 eV. An underlying linear polarization-dependent photoresponse of the device from the photothermoelectric effect (PTE) is seen to decrease by an order of magnitude at lower energies. This PTE response has been measured in a broad energy range (0.3-1.8eV) using a linearly polarized light along two main crystal axes, and is in good agreement with DFT calculations.