Trapping of Interlayer Excitons in MoSe2-WSe2 Heterostructures*

MoSe2-WSe2 heterostructures are known to host long lived spatially indirect interlayer excitons composed of bound electron and hole pairs that are located in different layers. Recently there has been significant interest in spatially controlling interlayer excitons via externally applied electric fields to demonstrate excitonic currents and trapping interlayer excitons via moiré superlattices. In this presentation, I will discuss how to use patterned graphene gates in close proximity to the heterostructure to create a spatially varying electric field within the vicinity of the interlayer exciton. The interaction between permanent dipole moment of the interlayer exciton and the electric field creates a spatial potential energy trap for the excitons, which is controlled by the geometry of the patterned graphene gate as well as the externally applied voltage. I will show that these trapped interlayer excitons can be identified through spatially resolved photoluminescence imaging and gate-dependent spectroscopy. Finally, I will discuss potential applications of the trapped interlayer excitons to quantum information science applications.