/(Ga,Mn)Sb Dirac semimetal/ferromagnetic semiconductor heterostructures*

Cd₃As₂ has attracted attention as a canonical Dirac semimetal. We aim to break time reversal symmetry (TRS) in Cd₃As₂ by interfacing with a ferromagnetic semiconductor (Ga,Mn)Sb.We have grown epitaxial Cd₃As₂ /(Ga,Mn)Sb bilayers by molecular beam epitaxy on GaSb(111) buffer layer using GaAs(111)B substrates.High-resolution XRD shows good crystalline quality of Cd₃As₂ layers with full width half maximum of rocking curves ~0.11°.AFM shows smooth surface of Cd₃As₂ with root mean square roughness ~1.2 nm.SQUID magnetometry reveals weak ferromagnetism in (Ga,Mn)Sb films,while low temperature magnetoresistance (MR) data show that they are highly resistive for the Mn composition used.We report the temperature dependent magneto-transport properties in Cd₃As₂/(Ga,Mn)Sb bilayers and investigate the magnetic proximity effect at the interface.The observation of hysteretic MR and a planar Hall effect suggest proximity-induced ferromagnetic ordering in Cd₃As₂.We have performed polarised neutron reflectivity measurements to get an indication of the proximity effect at the interface.We are exploring interfacing Cd₃As₂ with other ferromagnetic insulators in order to find an efficient material for breaking TRS in Cd₃As_2^.