Computational analysis of DSM and WSM devices*

Weyl and Dirac semimetals (WSM, DSM) are class of materials that can be used for spintronics applications. The important property of WSM and DSM materials that makes them suitable for spintronic devices is the charge to spin conversion. Recently the non local spin transport in a DSM Cd₃As₂ has been reported¹. We employ a combination of LLG and NEGF method to further understand WSM/DSM-FM based devices. Here we show local, non local spin transport and Lifshitz transition calculations from our numerical model. We explore the interaction between a ferromagnet (FM) and WSM/DSM as a means to design an in-memory computing element. We also look at some device structures based on WSM/DSM and FM heterostructures which can be used to create a DRAM. Lastly, we show how to create a spin circuit model based on the LLG/NEGF calculations.
1. Ben-Chuan Lin et al., "Electric Control of Fermi Arc Spin Transport in Individual Topological Semimetal Nanowires, " in Phys. Rev. Lett. 124, 116802