Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session S51: Materials for Quantum Information Science-1 (Materials Engineering)Focus Session Live
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Sponsoring Units: DMP DQI Chair: Nazar Delegan |
Thursday, March 18, 2021 11:30AM - 12:06PM Live |
S51.00001: Deterministic Positioning of Defect Based Qubits using Ion Beam Implantation for Nanofabrication and Modification Invited Speaker: Edward Bielejec We will present our results on ion beam implantation for nanofabricate and modifications down to single atom devices via direct write nanofabrication at Sandia National Laboratories’ Ion Beam Laboratory. We concentrate on the nanoImplanter, a focused ion beam (FIB) implantation capability that is a multi-species 10-100 kV FIB system with a minimum spot size of 10 nm with both mass resolution using an ExB filter and single ion implantation capability using fast blanking. The combination of high spatial resolution, variable energy and the ability to implant a range of elements from the periodic table makes this a versatile machine for a range of topics from deterministic seeding of TaOx memristor devices, high resolution ion beam induced charge collection (IBIC), deterministic single donor devices for quantum computing research, to the formation of individual defect centers in wide bandgap substrates including diamond, SiC, hBN, etc… using in-situ detectors. Here we concentrate on FIB implantation into diamond nanostructures for the creation of color centers where we demonstrate the ability to deterministically implant ions into diamond photonic nanostructures with high spatial resolution, <40 nm. This enables high resolution arrays for yield testing as well as the development of strong coupling between the resulting color center and the nanophotonic cavities. |
Thursday, March 18, 2021 12:06PM - 12:18PM Live |
S51.00002: Defect Engineering Enables Site-Controlled Single-Photon Generation in Monolayer WSe2 up to 150 K Kamyar Parto, Kaustav Banerjee, Galan Moody Single-photon emitters hosted by WSe2 provide unique advantages over existing technologies, notably the potential for site-specific enginering. However, the required cryogenic temperatures for these sources' functionality have been an inhibitor of their full potential. Existing fabrication methods, solely focusing on strain engineering, face fundamental challenges in extending the working temperature while maintaining the emitter's fabrication yield and purity. This work demonstrates a novel method of designing site-specific single-photon emitters in atomically thin WSe2 with near-unity yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. This method enabled emitters with purities above 95%, and working temperatures up to 150K, which is the highest observed in vdW semiconductor single-photon emitters without Purcell enhancement . This methodology, coupled with possible plasmonic or optical micro-cavity integration, potentially furthers the realization of future scalable, room-temperature, and high-quality vdW quantum light sources. |
Thursday, March 18, 2021 12:18PM - 12:30PM Live |
S51.00003: Laser writing with a solid immersion lens: towards optically coherent nitrogen-vacancy centers in microstructured diamond Viktoria Yurgens, Josh A. Zuber, Sigurd Flågan, Marta De Luca, Brendan Shields, Tomasz Jakubczyk, Ilaria Zardo, Patrick Maletinsky, Richard J. Warburton An open Fabry-Perot microcavity coupled to a negatively charged nitrogen-vacancy center (NV) in diamond is a promising spin-photon interface [1-4]. Implementation of diamond into the system requires thinning it down to ~µm thickness while maintaining the NV optical coherence, a well-known challenge with standard NV creation methods. Initial studies on laser writing of NVs yielded promising results, but relied on a narrow window of parameters for successful writing [5]. We widen this window by using a solid immersion lens (SIL), which not only facilitates laser writing over a broad range of pulse energies, but also allows for vacancy formation close to a diamond surface without inducing surface graphitization. We present NV arrays that have been created between 1 and 40 µm from a diamond surface, presenting optical linewidth distributions with means as low as 61.0 MHz, including spectral diffusion induced by off-resonant repump. This emphasizes the exceptionally low charge-noise environment of laser-written NVs – a crucial prerequisite for the realization of distributed quantum networks based on spins in diamond. |
Thursday, March 18, 2021 12:30PM - 12:42PM Live |
S51.00004: Optical properties of plasmonic metasurface with sub-nm gaps - Extremely large third-order nonlinear optical effects caused by electron transports - Takashi Takeuchi, Kazuhiro Yabana Plasmonic metasurfaces composed of periodically arrayed metallic nano-objects on plane have drawn attention in terms of its exotic optical characteristics. Although investigations of metasurfaces conducted to date have focused on structures with sub-wavelength spatial scale, recent experimental studies have demonstrated those with much smaller size in which the gap distances between the nano-objects reach sub-nm length where quantum mechanical effects become important. |
Thursday, March 18, 2021 12:42PM - 12:54PM Live |
S51.00005: Simulating STM Images for Atomic Precision Dopant Placement in Si Jonathan Wyrick, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Fan Fei, Richard Silver Placement of single P atoms in Si at pre-planned atomic lattice sites is a technical feat which has been achieved in a handful of proof of concept devices using STM-guided hydrogen lithography. The applicability of this technique to more complex structures with increasing numbers of individual P atoms is of significant scientific interest as it will enable construction of designer potentials such as artificial molecules, lattices, and qubit structures for quantum information and computing. However, the needed level of detail in fabrication has been limited due to a less than 100% success rate at each planned P site. We detail density functional theory calculations which simulate scanning tunneling microscopy (STM) images and enable in situ determination of species adsorbed at planned P adsites. In combination with subsequent STM-based manipulations or additional dosing steps as needed this will allow for an increased yield and therefore fabrication of higher complexity device geometries. |
Thursday, March 18, 2021 12:54PM - 1:06PM Live |
S51.00006: Electric-Field Control of Strain-Driven Tuning of FMR in the Low-Loss Ferrimagnetic Coordination Compound V[TCNE]x Seth Kurfman, Andrew J Franson, Piyush Shah, Yueguang Shi, Michael Flatté, Gopalan Srinivasan, Michael R Page, Ezekiel Johnston-Halperin Electric-field control of magnetic resonance has application potential in the design of low-power, compact, high-frequency magnetoelectronic devices, such as microwave filters and circulators. To date, this work has exploited low-loss ferrite materials mechanically coupled to piezoelectric substrates. However, traditional ferrites typically require lattice-matched substrates and extreme growth conditions to produce high-quality material, making on-chip integration a significant challenge. Here, we demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss (α = (3.98±0.22) × 10-5), molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]x~2) with PMN-PT piezoelectric transducers. The ultra-narrow FMR linewidth of V[TCNE]x allows us to demonstrate tuning of more than 6 times the resonant linewidth by applying 13.3 kV/cm across the PMN-PT transducer. A systematic analysis of the Gilbert damping in unstrained and strained V[TCNE]x films shows no change in damping, α. Combined with the demonstrated ability to pattern V[TCNE]x at micron-length scales on a wide variety of substrates, these results herald a new paradigm for on-chip voltage-tuned microwave devices. |
Thursday, March 18, 2021 1:06PM - 1:18PM Live |
S51.00007: Probing the Structure of V[TCNE]x via Electron Energy Loss Spectroscopy Amanda Trout, Seth Kurfman, Michael Chilcote, Ezekiel Johnston-Halperin, David W McComb Vanadium tetracyanoethylene (V[TCNE]x) is an organic-based ferrimagnetic semiconductor which has garnered interest due to its superb magnetic resonance properties, room temperature magnetism, and insensitivity to substrate. The magnetic properties have been well studied but the details of the mechanism are not understood due to a lack of structural information. V[TCNE]x films are typically amorphous, and the material is extremely air-sensitive when not encapsulated, making characterization challenging. In general, the structure is believed to be V2+ in octahedral coordination with six TCNE molecules. We present scanning transmission electron microscopy (STEM) electron energy loss spectroscopy (EELS) of V[TCNE]x films using a vacuum transfer holder. The high spatial resolution EELS data confirms the V2+ oxidation state with no variation in the V[TCNE]x layer. Additionally, splitting observed on the L2 peak suggests the V is in a perfect octahedral environment. Upon oxidation, the C K edge 1s-π* peak is drastically decreased while the N K edge 1s-π* peak remains consistent suggesting that the carbon-carbon double bond of the TCNE is targeted during oxidation. These results shed significant light on the elusive structure of V[TCNE]x. |
Thursday, March 18, 2021 1:18PM - 1:30PM Live |
S51.00008: An in-situ single photon source detection platform for deterministic nanometer resolution ion implantation Michael Titze, Vigneshwaran Chandrasekaran, Han Htoon, Edward Bielejec Single photon sources (SPS) are of critical interest for a wide range of use from metrology to the basis of quantum communication, computation and sensing. SPS based on color centers in silicon carbide and other wide band gap semiconductors such as hBN, diamond, etc. require the control over both the spatial position as well as the number of optically active color centers. We developed a platform for focused ion beam (FIB) implantation that allows control of positioning to <50 nm and implantation down to single impurity atoms using counted ion implantation. However, the typically low conversion efficiency from implanted atom to optically active color center can range from <3% to >80% depending on the material and the implantation energy. For these low efficiency processes an in-situ technique to identify the creation of SPS is required. To this end we have built an in-situ photoluminescence (PL) setup integrated into the FIB allowing detection of single photon emission during ion implantation. Using this PL setup in conjunction with a Hanbury Brown Twiss interferometer allows us to deterministically create and measure SPS in a range of materials systems with nanometer resolution. |
Thursday, March 18, 2021 1:30PM - 1:42PM Live |
S51.00009: Single crystal diamond membranes for quantum networking and sensing Xinghan Guo, Nazar Delegan, Zixi Li, Tianle Liu, Amy Butcher, David Awschalom, F. Joseph, Alexander A High Atomic defects in single crystal diamond, such as nitrogen-vacancy centers and silicon-vacancy centers, are promising qubit candidates for quantum communication and sensing. However, there are difficulties to fully utilize their advantages in bulk diamond due to its high refractive index and limited nanofabrication methods. In order to allow better integration flexibility of color centers while maintaining their coherence properties, we developed a process to create high quality, atomically smooth, large-scale single-crystal diamond membranes with no preference on carrying wafer choices. Herein we will present the fabrication steps in detail, including He+ implantation, CVD overgrowth, membrane undercut and transfer, backside etching, and additional patterning. Some recent progress related to the membrane integration will also be demonstrated, namely, nanophotonic cavity integration and strain engineering, which would be beneficial in multi-qubit networks, hybridized quantum systems, and quantum sensing applications. |
Thursday, March 18, 2021 1:42PM - 1:54PM Live |
S51.00010: High-Q Nanophotonic Resonators on Diamond Membranes using Atomic Layer Deposition TiO2 Amy Butcher, Xinghan Guo, Robert Shreiner, Nazar Delegan, Kai Hao, Peter J. Duda, III, David Awschalom, F. Joseph, Alexander A High Nanophotonic resonators are critical elements in solid-state quantum networks, as they can enable coherent light-matter interactions and enhance zero-photon line emission. In diamond, current techniques to fabricate these devices often introduce significant surface roughness, lattice strain, and poorly controlled surface states which limit device performance and scalability. Here, using atomic layer deposition of TiO2, we developed a nanophotonic fabrication platform that avoids substrate and sidewall etching while retaining the potential for high-cooperativity interfacing with color centers in thin diamond membranes. The resulting devices are exceptionally smooth and can be built on arbitrary substrates. In this work, we fabricated ring resonators and 1D photonic crystal cavities (PhCCs) with quality factors exceeding 10^4 and integrated high-Q PhCCs with diamond membranes. |
Thursday, March 18, 2021 1:54PM - 2:06PM Live |
S51.00011: First-principles study of negatively charged nitrogen vacancy and silicon vacancy in diamond in strained environments Benchen Huang, He Ma, Yu Jin, Satcher Hsieh, Prabudhya Bhattacharyya, Chong Zu, Bryce H Kobrin, Norman Yao, Giulia Galli In the last decade, the negatively charged nitrogen vacancy (NV-) and silicon vacancy (SiV-) in diamond have been recognized as promising point defects candidates for quantum information technologies. For example, the NV- center has been recently shown to be an efficient high-pressure quantum sensor [1]. We carried out first-principles calculations based on density functional theory to compute the properties of the NV- and SiV- centers in strained environments, including zero-phonon lines (ZPL) and photoluminescence spectra. We also performed photoluminescence measurements, finding good agreement with theoretical predictions. Our results allowed us to solve previous controversies present in the literature [2,3]. Importantly, our findings point at possible ways to improve the performance of the NV- and SiV- centers in diamond as quantum sensors. |
Thursday, March 18, 2021 2:06PM - 2:18PM Live |
S51.00012: Molecular pathways and thermal stabilities of vacancy-complex formation in silicon carbide Elizabeth Lee, Alvin Yu, Juan De Pablo, Giulia Galli Electron spin defects in silicon carbide (SiC), in particular divacancies, are emerging platforms for hosting solid-state qubits for scalable quantum technologies. Despite successful electronic and optical characterizations of divacancies in SiC, it remains challenging to control their formation and, in general, to engineer defects with desired properties. Here we investigate the dynamics of several vacancy defects in SiC using molecular dynamics simulations. We find that Si and C monovacancies have differential stabilities giving rise to complex divacancy formation and dissociation pathways. We identify pathways along which new promising spin defect complexes (e.g., antisite-vacancy) are formed. The predicted temperature-dependent behavior of vacancy defects agrees well with recent annealing experiments. Our results show that the stability of silicon and the mobility of carbon monovacancies limit the formation of divacancies at high temperatures, providing molecular insights into the controlled generation of spin defects hosted in vacancy complexes. |
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