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The ion implantation of H⁺ and D⁺ into Ga₂O₃ produces several O-H and O-D centers that have been investigated by vibrational spectroscopy. These defects include the dominant V_Ga(1)-2H and V_Ga(1)-2D centers studied previously [1] in addition to additional defects that can be converted into this structure by thermal annealing. The polarization dependence of the spectra has been analyzed [2] to determine the directions of the transition moments of the defects and to provide information about defect structure [3]. The interaction of V_Ga(1)-nD centers with other defects in the implanted samples has also been investigated to help explain the number of O-D lines seen and their reactions upon annealing.

[1] P. Weiser et al., Appl. Phys. Lett. 112, 232104 (2018).
[2] A. Portoff, J. Appl. Phys. 127, 055702 (2020).
[3] A. Portoff et al., unpublished.