Volatile and non-volatile resistive switching in Mott materials*

Electrically-induced resistive switching offers new opportunities to emulate spiking neurons and plastic synapses for neuromorphic computing. Examples of materials exhibiting such behavior include several vanadium oxides, correlated nickelates, titanium dioxide, and many more. Manipulating the resistive switching properties of these oxides and modifying their transport properties are crucial for the development of future oxide electronics. In this work, we investigated the switching mechanisms behind volatile and non-volatile resistive switching in Mott materials, mainly focusing on vanadium oxides. The metal-insulator transition properties of the conductive filament and its nanoscale lattice structure will be discussed. Our study offers new insight into which mechanism dominates the switching process: electroforming or metal-insulator transition.