Narrow linewidth tin-vacancy centers in diamond waveguides*

Coupling high-quality solid-state quantum emitters to photonic devices is a critical step towards building quantum photonic networks. The negatively charged tin-vacancy (SnV^-) center in diamond is a promising optically accessible solid-state qubit candidate with narrow-linewidth emission and long spin coherence time. However, the integration of SnV^- centers into photonic devices has yet to be realized. In this talk, we present narrow-linewidth SnV^- centers (~36 MHz) in diamond waveguides [ACS Photonics 7, 2356-2361 (2020).]. We use our recently developed shallow ion implantation and growth technique to generate SnV^- centers and apply the quasi-isotropic etch technique to fabricate suspended diamond nanostructures.