-based Mott Transistors with a Ferroelectric Gate*

We present a comprehensive study of ferroelectric-gated Mott transistors based on high-quality epitaxial heterostructures composed of a ferroelectric Pb(Zr,Ti)O₃ (PZT) gate and a correlated oxide RNiO₃ (R = La, Nd, Sm) channel. For single-layer nickelate channels, including Sm_0.5Nd_0.5NiO₃, NdNiO₃ (NNO), and LaNiO₃ (LNO), the resistance switching ratio ΔR/R_on increases exponentially with decreasing channel thickness until it approaches the electrical dead layer thickness, with the maximum ΔR/R_on~200% observed in 1 nm LNO channel. Inserting a La_1-xSr_xMnO₃ (LSMO) buffer layer can lead to over two orders of magnitude increase in ΔR/R_on for devices with the same channel thickness, which is attributed to a tailored density profile due to the interfacial charge transfer. Our studies highlight the intricate interplay of charge itineracy and carrier density in determining the performance limit of ferroelectric gated mott-transistor.