hybrid*

Resistive switching (RS) is one of the key phenomena proposed for nonvolatile memories, neural networks, and optoelectronics. The unique properties of quantum materials by implementating their functionalities in hardware, provide energy-efficient solutions for these applications. Recent studies based on VO₂ and V₂O₃ have shown the possible development of scalable neuristors and memristors by combining two physical phenomena (electric + thermal or electric +pressure/strain). In this work, we have fabricated and characterized a hybrid composed of the photoconductor CdS on top of V₃O₅ thin film. V₃O₅ exhibits an insulator-metal transition (IMT) around Tc=415K. We have investigated the electrical properties of the V₃O₅ when submitting the bilayer to illumination, under different temperature. At RT, V₃O₅ undergoes a non-volatile RS upon illumination. Cycling V₃O₅ through the high temperature metallic state (above Tc) provides the reset mechanism. Our work demonstrates a new optically controlled RS behavior.
Sci. Rep. 10, 4292 (2020).
Proc. Natl. Acad. Sci. 116, 8798–8802 (2019).