Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session J29: Semiconductor Qubits II
3:00 PM–6:00 PM,
Tuesday, March 16, 2021
Sponsoring
Unit:
DQI
Chair: Dwight Luhman, Sandia National Laboratories
Abstract: J29.00013 : High Fidelity Spin Readout in a CMOS Device
5:24 PM–6:00 PM
Live
Presenter:
Matias Urdampilleta
(Institu Néel, CNRS)
Authors:
Matias Urdampilleta
(Institu Néel, CNRS)
David J. Niegemann
(Institu Néel, CNRS)
Emmanuel chanrion
(Institu Néel, CNRS)
Baptiste jadot
(Institu Néel, CNRS)
Cameron spence
(Institu Néel, CNRS)
Pierre-André mortemousque
(Leti, CEA)
Christopher Bauerle
(Institu Néel, CNRS)
Benoit Bertrand
(Leti, CEA)
romain maurand
(IRIG, CEA)
xavier jehl
(IRIG, CEA)
marc sanquer
(IRIG, CEA)
Silvano De Franceschi
(IRIG, CEA)
Maud Vinet
(Leti, CEA)
Tristan Meunier
(Institu Néel, CNRS)
In particular, it is nowadays possible to trap single electron spins in silicon quantum dots and perform high fidelity quantum gates. These demonstrations combined with the intrinsic properties of the silicon lattice (low spin orbit and hyperfine interaction) make CMOS device an excellent candidate for scalable quantum architectures.
In this presentation, we will show how we can detect a single spin in a CMOS device thanks to an original approach which combines gate-based dispersive charge sensing and a latched Pauli spin blockade mechanism. This scalable method allows us to read out a single spin with a fidelity above 98% for 0.5 ms integration time. Moreover, we show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. Finally, we will show how these results holds particular relevance for the future co-integration of spin qubits and classical control electronics.
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