Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session H71: Poster Session I (2:00pm - 4:00pm)
2:00 PM,
Tuesday, March 16, 2021
Abstract: H71.00326 : GaAs to Si Nano-Bonding at T<220°C - Optimizing Nano-Contacting and Surface Energy Engineering for Interphase Formation*
Presenter:
Siddarth Jandhyala
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Authors:
Siddarth Jandhyala
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Aashi R Gurijala
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Pranav Penmatcha
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Nikhil Suresh
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Amber A Chow
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Shaurya Khanna
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Wesley Peng
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Thilina Balasooriya
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Mohammed Sahal
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Sukesh Ram
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Robert J Culbertson
(Physics Dpt/Eyring Materials Cr, Arizona State University)
Nicole Herbots
(Physics Dpt/Eyring Materials Cr, Arizona State University)
This work uses instead low temperature Nano-BondingTM, 1 (NB), via Surface Energy Engineering (SEE), to create 2D Precursor Phases leading to a high density of molecular cross-bonds and interphase formation. SEE is based on surface energy (SE) characterization via Three Liquid Contact Angle Analysis (3LCAA), and on composition by Ion Beam Analysis (IBA), and X-Ray Photoelectron Spectroscopy (XPS).
IBA yields absolute O coverages while XPS measures the distribution of oxidation states.
After Nano-Bonding, Surface Acoustic Wave Microscopy (SAM) and Cross-Sectional Transmission Electron Microscopy (TEM) image the bonded interface. SAM reveals that 98±1% of GaAs successfully nano-bonds to Si at T<220°C with compression and 48±1% bonds without compression.
TEM further reveals that both GaAs and Si are so reactive after SEE, that they oxidize very significantly without pressure applied in gaps found in the 48±1% bonded interphase.
1 Herbots et al. US Pat. 6613677 (2003), 7,851,365 (2010), 9,018,077 (2015), 9,589,801 (2017), pend. (2020)
*SiO2 Innovates LLC
AccuAngle Analytics LLC
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700