with a Superconductor*

Establishing ohmic contact to van der Waals semiconductors such as MoS₂ is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS₂ with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS₂ has been recently reported. We evaluate an edge contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature. While the resulting contact is not ohmic, this work has ramifications for future contact recipes and may hold promise for application to hybrid structures.