Electrical Transport and Low-Frequency Noise studies in Edge-contacted Hexagonal Boron Nitride and Graphene Heterostructure Field-Effect Transistors*

Two-dimensional heterostructure field-effect transistors (2D-HFETs) with one-dimensional electrical contacts to two-dimensional channels have recently shown improved device performance. While a number of low-frequency noise studies exist on bare graphene devices supported on silicon dioxide gate insulators with surface contacts, such studies in heterostructure devices comprised of epitaxial graphene on hexagonal boron nitride (hBN) with channel side contacts are extremely limited. In this talk, we present a systematic, temperature-dependent study of electrical transport and low-frequency noise in edge-contacted high mobility HFET with a single atomic layer graphene channel encapsulated by hexagonal boron nitride and demonstrate ultra-low noise with Hooge parameter ~ 0.00001. We combine measurements and modeling based on underlying microscopic scattering mechanisms caused by charge carriers and phonons and finally correlate the high-performance, temperature-dependent transport of the device with its noise characteristics. Our study provides a pathway towards engineering low noise graphene-based high-performance 2D-FETs with one-dimensional edge contacts for applications such as digital electronics and chemical/biological sensing.