Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session E35: Magnetic Interactions at Complex Oxide Interfaces
8:00 AM–11:00 AM,
Tuesday, March 16, 2021
Sponsoring
Unit:
GMAG
Chair: Alexander Grutter, National Institute of Standards and Technology
Abstract: E35.00001 : New functionalities at oxide interfaces: Ultralow-power magnetization switching by orbital selection and high-mobility two-dimensional hole/electron transport*
8:00 AM–8:36 AM
Live
Presenter:
Le Duc Anh
(Univ of Tokyo)
Authors:
Le Duc Anh
(Univ of Tokyo)
Shingo Kaneta-Takada
(Univ of Tokyo)
Masashi Tokunaga
(Univ of Tokyo)
Munetoshi Seki
(Univ of Tokyo)
Hitoshi Tabata
(Univ of Tokyo)
Masaaki Tanaka
(Univ of Tokyo)
Shinobu Ohya
(Univ of Tokyo)
Bias-driven magnetization control of ferromagnets is highly desirable, but still challenging because generally electric-field effect is too weak to induce a large change in the magnetic anisotropy (MA) that is required for magnetization switching. Here, using a magnetic tunnel junction (MTJ) composed of La0.67Sr0.33MnO3 (LSMO)/SrTiO3 (STO)/LSMO, we demonstrate that a drastic change in the MA of LSMO can be induced when the chemical potential EF at the LSMO/STO interface is moved between different orbital symmetry bands [1]. By this new approach, we have successfully realized a magnetic-field-free 90°-magnetization switching of LSMO by applying a small electric field of 0.05 V/nm. With changing V, the MA of the LSMO layer switches from two-fold symmetry to four-fold symmetry when the EF is moved from the eg band to the t2g band. This change of MA is strong enough to rotate the magnetization without any assisting magnetic field, with an extremely small switching current density of ~ 10–2 A/cm2 [2]. Furthermore, we show our recent finding of a 2DHG with ultrahigh mobility up to 24,000 cm2V–1s–1 (at 2 K), which is realized by depositing a sub-nm-thick Fe layer (thickness ≦ 0.2 nm) on an STO surface. This is the highest hole mobility ever reported in oxide materials [3]. We found that the 2DHG/2DEG transport can be switched and controlled by the Fe thickness and gate voltage.
[1] L. D. Anh et al., Sci. Rep. 7, 8715 (2017). [2] L. D. Anh et al., Phys. Rev. Applied 12, 041001 (2019).[3] L. D. Anh et al, Adv. Mater. 32, 1906003 (2020).
*This work was supported by Grants-in-Aid for Scientific Research, the JST CREST, and Spin-RNJ.
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