Building and Characterizing Orthogonal Gates in a SiMOS S-T Qubit*

All-electrical control of a singlet-triplet qubit in a silicon metal-oxide-semiconductor double quantum dot may be realized through the combination of the exchange interaction and intrinsic spin-orbit effects at a silicon/silicon-dioxide interface. Such a qubit operates independently of ancillary components, such as micromagnets or microwave resonators, that are typically required for qubit control. However, the native control axes of this qubit are non-orthogonal and for quantum computation it is desirable to have orthogonal logic gates. In this work, we demonstrate a set of orthogonal gates that are optimal electrical control solutions incorporating composite exchange and spin-orbit dominated gates. We assess the performance of these composite orthogonal gates using gate set tomography and Clifford randomized benchmarking.