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<div style="direction: ltr;">The ongoing search for earth-abundant transparent conducting oxides (TCOs) has spread across a wide variety of research fields, highlighting the correlated metal SrVO₃ as a potential candidate. SrVO₃ exhibits high conductivity and transparency in the visible. Moreover, SrVO₃ is an attractive candidate for future electronics. A major hurdle for the synthesis of high quality SrVO₃ is to mitigate the formation of defects throughout the thin film. These defects can cause electron scattering and result in high resistivity and obscure some of the interesting physics. Film growth was done with molecular beam epitaxy (MBE), providing a scalable and industry-compatible fabrication process. In this work we present low defect SrVO₃ films with residual resistivity ratios exceeding 15 and room temperature resistivities in the order of 30 µΩ cm. Careful analysis of the structural and electronic properties of the SrVO₃ films paves the way towards further improvement of their quality and their implementation as TCO in optoelectronics and renewable energy devices.</div>