Thermal Laser Evaporation for the Growth of Oxide Films

The growth of oxide heterointerfaces demands a precise control of the deposition parameters and a high-purity of the source materials. Thermal laser evaporation (TLE) is a promising candidate for the deposition of high-purity oxide heterostructures. In the presentation we reveal that TLE is well suited for the growth of high-quality oxide films, reporting on the growth and characterization of a spectrum of binary transition metal oxides films deposited by TLE. These films were grown by laser-evaporating metallic source materials under oxidizing conditions and deposition on unheated Si (100) substrates. Our results reveal the potential of TLE for the growth of oxide heterostructures using almost any element of the periodic table.