State-of-the-art Quantum Dot devices from a full 300mm process line: towards scalable spin qubit devices

Intel continues with its efforts towards the fabrication of spin qubit devices in a full 300mm process line. Significant progress has been achieved on the fin-based process flow that yields QD devices with performance comparable to academic’s state-of-the-art devices. Among other important milestones of this work is the implementation of fin-to-fin charge sensing which is needed to operate in the single electron regime. We will also present updates on wide linear array devices as well as the current status of spin qubit device fabrication; both are key to the long-term implementation of scalable spin qubit devices in silicon for quantum computing technology.