thin films*

Breaking time-reversal symmetry in a Dirac semimetal (DSM) via magnetic doping is expected to create a Weyl semimetal. This motivates us to study the doping of the DSM Cd₃As₂ using transition metals. Here, we attempt to introduce Mn into Cd₃As₂ thin films grown by molecular beam epitaxy on GaAs (111)B substrates with a GaSb buffer layer. Atomic force microscopy and X-ray diffraction show that the films have good crystalline quality (root mean square surface roughness ~ 1.5 nm and full-width half maximum of rocking curves ~ 0.12°). However, cross-sectional scanning transmission electron microscopy indicates constraints on Mn incorporation and the formation of magnetically inhomogeneous films with a near-surface Mn-rich compound. SQUID magnetometry shows the presence of weak ferromagnetism. We use low-temperature transport measurements in patterned devices as a function of gate voltage, temperature, and magnetic field angle to understand Shubnikov-de Haas oscillations and quantum transport in this hybrid Dirac material.