Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session S57: Quantum and Ferroelectric Phenomena in Layered Materials
11:15 AM–2:15 PM,
Thursday, March 5, 2020
Room: Mile High Ballroom 3A
Sponsoring
Unit:
DMP
Chair: Peter Bøggild
Abstract: S57.00008 : Imaging Strain-Induced Quantum Emitters*
Presenter:
Ashley Cavanagh
(John A. Paulson School of Engineering and Applied Sciences, Harvard University)
Authors:
Ashley Cavanagh
(John A. Paulson School of Engineering and Applied Sciences, Harvard University)
Dylan Renaud
(John A. Paulson School of Engineering and Applied Sciences, Harvard University)
Marko Loncar
(John A. Paulson School of Engineering and Applied Sciences, Harvard University)
Robert Moore Westervelt
(John A. Paulson School of Engineering and Applied Sciences, Harvard University)
Color centers in diamond produce long lived quantum emitters [1]. An alternative approach to creating quantum emitters, as suggested by [2], involves using an array of silica nanopillars to induce strain in a two dimensional Van der Waals material, creating quantum dot-like quantum emitters at each point of strain. This approach is appealing because the locations of the quantum emitters can be controlled and their properties are tunable. Our goal is to electrically characterize these strain-induced quantum emitters using the scanning probe microscope (SPM) technique described in [3]. The cooled SPM tip will be used as a moveable gate to spatially resolve rings of conductance around each point of strain due to the Coulomb-blockade and provide information about the number of electrons at each point.
[1] L Childress et al., Science 312, 281 (2006).
[2] C. Palacios-Berraquero et al., Nat Commun 8, 1 (2017).
[3] A. C. Bleszynski-Jayich et al., Phys. Rev. B 77, 245327 (2008).
*Support from STC for Integrated Quantum Materials, NSF DMR 1231319, DOE Basic Energy Sciences DE-FG02-07ER46422, and National Nanotechnology Coordinated Infrastructure (NNCI) NSF ECCS-1541959.
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