vertical devices*

Vanadium oxides exhibit electrically-triggered, volatile, resistive switching and provide a promising opportunity to mimic spiking neurons for neuromorphic computing. The control of the physical properties of these oxides is an important requirement to develop oxide electronics for future technology. However, a detailed understanding of the non-volatile filamentary formation in these Mott materials is still lacking. In this work, we investigated the mechanisms behind volatile and non-volatile resistive switching in electrically-driven VO₂ vertical devices. By using electrical transport measurement and in-situ transmission electron microscopy, the metal-insulator transition properties of the conductive filament and its nanoscale lattice structure are studied. Our works address the important issues in resistive switching based neuromorphic technologies.