Transport properties of exfoliated GaTe thin flakes*

Metal mono-chalcogenide(MMCs), such ad GaS, GaSe, InSe, and GaTe, have recently attracted much attention due in part to the evolution of their direct bandgap as a function of the number of layers. Although intrinsic MMC is nonmagnetic, a recent first principle calculation [1] predicts a Stoner-type magnetic instability that leads to the formation of a half-metallic and hence ferromagnetic ground state, which would make these materials interesting for spin transport or applications in spintronics. Here we discuss the temperature-dependent response of Field-Effect Transistors fabricated from GaTe single-crystals grown via a flux method, and measured through two and foru-terminal configurations. We will also discuss the evolution of the Hall effect as a function of the temperature.

Bibliography
[1] C.Ting, Z.Li, and Steven G. Louie. "Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe." Phys. Rev. Lett. 114, 236602 (2015).