Quantum Spin Systems in Classical Electronic Devices*

The neutral divacancy (VV0) in silicon carbide (SiC) combines the advantages of a long lived spin system [1] and a near-infrared spin-photon interface [2] in a material compatible with state-of-the-art CMOS type fabrication techniques. Here, we use this scalable material to demonstrate a flexible quantum platform built by integrating and isolating single divacancies in a p-i-n diode structure.

This simple integration allows us to reduce electrical noise by engineering the defect’s environment using charge depletion. This technique effectively eliminates spectral diffusion leading to optical linewidth narrowing approaching the transform limit. Broadly, this method could be generalized to produce ideal quantum emitters in various electrically “noisy” host materials. Additionally, field confinement in the junction enables wide tuning of the optical lines by almost a terahertz. Since this field is applied along the symmetry axis, the orbital splitting and associated mixing can be minimized. Finally, using electric fields and optical excitation, we show a method for deterministic charge state control of the divacancy.

Overall, we present a narrow, widely tunable and stable spin based single photon source ideal for communication networks and long-distance entanglement. These results demonstrate the power in combining highly coherent quantum spin system with scalable classical electronics.

Related publication:
C. P. Anderson* and A. Bourassa* et al., Science (2019) [arXiv:1906.08328]
Other References:
[1] K. C. Miao et al., Science Advances (2019) [arXiv 1905.12780]
[2] D. J. Christle et al., PRX 7, 021046 (2017)

This work was peformed in collaboration with C. P. Anderson, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. Crook, H. Abe, J. U Hassan, N. T. Son, T. Oshima, and D. D. Awschalom