Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session S07: Quantum Computing with Defects
11:15 AM–2:15 PM,
Thursday, March 5, 2020
Room: 102
Sponsoring
Unit:
DQI
Chair: Viatcheslav Dobrovitski, Delft University of Technology
Abstract: S07.00014 : Seeking superconductivity with new, two-dimensional dopants super-saturated in silicon
Presenter:
Ke Tang
(National Institute of Standards and Technology)
Authors:
Ke Tang
(National Institute of Standards and Technology)
Hyun Soo Kim
(National Institute of Standards and Technology)
Aruna N Ramanayaka
(National Institute of Standards and Technology)
Michael E Hoenk
(Jet Propulsion Laboratory)
Shouleh Nikzad
(Jet Propulsion Laboratory)
April Jewell
(Jet Propulsion Laboratory)
Joshua Pomeroy
(National Institute of Standards and Technology)
Realizing superconducting Josephson junctions within group-IV semiconductors would herald a new era of solid-state quantum computing. For some acceptors, super-saturated doping has been demonstrated to superconduct, e.g. boron-doped silicon having a Tc of 0.6 K [1]. Here we explore the possibility of superconductivity in similar material systems using both n-type (antimony) and p-type (aluminum) delta-doped layers. Low-temperature molecular beam epitaxy (MBE) has been used to embed atomically thin (2D) layers of antimony and aluminum atoms with dopant densities on the order of (1013 - 1014) cm-2. Mesa-etched Hall bar devices are fabricated on these delta layers and magnetotransport measurements at 4 K will be presented to study the material properties, such as carrier concentration and mobility. Temperature dependent measurements below 500 mK will be carried out in a dry dilution refrigerator to test for superconductivity. Comparisons between different dopant systems will also be presented.
[1] Marcenat, C. et al. Phys. Rev. B 81, 020501–020504(R) (2010).
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