Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session R65: Superlattices and Nanostructures I: Growth, Structure, and Electronic Properties
8:00 AM–10:00 AM,
Thursday, March 5, 2020
Room: Mile High Ballroom 4F
Sponsoring
Unit:
DCMP
Chair: Sangita Bhowmick, Shiv Nadar Univ
Abstract: R65.00006 : Epitaxial growth of atomically-sharp GeSn/Ge/GeSn tensile strained (≥1.5 %) quantum well on Si
Presenter:
Simone Assali
(Ecole Polytechnique de Montreal)
Authors:
Simone Assali
(Ecole Polytechnique de Montreal)
Anis Attiaoui
(Ecole Polytechnique de Montreal)
Patrick Del Vecchio
(Ecole Polytechnique de Montreal)
Samik Mukherjee
(Ecole Polytechnique de Montreal)
Aashish Kumar
(Ecole Polytechnique de Montreal)
Oussama Moutanabbir
(Ecole Polytechnique de Montreal)
Here, we discuss the epitaxial growth of a tensile-strained GeSn/Ge/GeSn heterostructure(s-Ge) with sharp interfaces and in-plane biaxial strain above 1.5% grown on lattice-mismatched Ge0.86Sn0.14. The sharpness of the Ge/GeSn heterostructure interfaces will be addressed using TEM-EELS and atom probe tomography(APT) measurements. A defect-free s-Ge layer thickness in the 13-1.2nm range is achieved and its pseudomorphic nature will be discussed using STEM and XRD. The s-Ge QW platform is a new versatile platform to investigate LH spin-based qubits and high hole mobility electronics.
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