Quantum transport in a dual-gated antiferromagnetic topological insulator*

Magnetic topological insulator provides an exciting arena to investigate the interplay between magnetism and spin-momentum-locked Dirac surface state [1]. The recent discovery of the intrinsic antiferromagnetic topological insulators, MnBi₂Te₄, MnBi₄Te₇, and MnBi₆Te₁₀ has enabled us to study the quantum anomalous Hall effect and axion insulator in exfoliated crystals [2,3]. Especially interesting is the electric-field effect on the crystals due to the expected finite topological magnetoelectric effect. We here report the quantum transport properties of dual-gated antiferromagnetic topological insulator devices, which allow the independent control of the carrier density and the electric field.

[1] Y. Tokura, K. Yasuda, A. Tsukazaki, Nat. Rev. Phys. 1, 126–143 (2019) [2] Y. Deng et al., arXiv 1904.11468 [3] C. Liu et al., arXiv 1905.00715