Weak-antilocalization Induced by Spin-orbit Interaction in Two-dimensional Tellurium*

Tellurium (Te) is an intrinsic p-type semiconductor with a narrow bandgap of 0.35eV, whose hexagonal crystal structure is formed by van der Waals interaction between each helical atom chains. Through controllable atomic layer deposition (ALD) grow dielectric doping, we can access transport properties of Te conduction band. Here we report experimental results regarding weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films at cryogenic temperatures. The gate and temperature dependence on WAL shows D'yakonov-Perel (DP) mechanism plays the main role in spin relaxation and electron-electron (e-e) interaction is dominant for phase relaxation, which matches well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. Also, phase coherence length of Te extracted from WAL feature reaches 573nm at T=1K and transition from weak-localization (WL) to weak-antiocalization (WAL) is observed by tuning the gate bias, indicating its potential for future tunable spintronic applications.