Synthesis and properties of hexagonal GaBN/BN heterostructure and quantum wells. 6.3.6*

Hexagonal boron nitride (h-BN) is the only layer-structured or quasi-2D material with bandgap >6.0 eV among the members of the III-nitride semiconductor family. The unique features of h-BN make it highly attractive in novel device applications, which includes high optical emission efficiency, possibility of p-type conductivity control, promising host for single photon emitter, as well high detection efficiency for thermal neutrons. Like all other compound semiconductors, achieving the ability of bandgap tuning through alloying will further expand the applications of h-BN. Here, we report the synthesis of h-GaBN alloys using metal organic vapor deposition (MOCVD) growth. By utilizing h-BN epilayers as templates, we have successfully achieved h-GaBN alloys and h-GaBN/BN quantum wells with Ga-content up to 7%. The effects of phase separation and critical thickness have been investigated in detail and will be reported. The present study provides insights into possible ways to synthesize layered GaBN and would open up many new applications.