Effects of growth parameters on faceting and defects in confined epitaxial lateral overgrowth*

Laterally grown III-V epitaxial semiconductor layers offer multiple advantages over conventional vertically-grown layers for fabricating novel semiconductor devices and III-V on Si integration for photonics. In confined epitaxial lateral overgrowth (CELO), pre-fabricated dielectric templates are used to control the growth and its direction. Such grown nano-structures however, often suffer from high densities of stacking faults and rotational twins, which limit the performance of the devices made using these materials. Here, we use scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI) to characterize these nano-structures grown by metal organic chemical vapor deposition (MOCVD) on patterned InP substrates. Using a combination of plan-view and cross-sectional TEMon the same nano-structure, we explore the influence of growth conditions (growth temperature and V/III ratio), template direction and substrate orientations on the evolution of facets and the nature of defects.We further show growth and characteristics of heterostructures and superlattice structures grown using CELO, as well as electrical measurements of these nanostructures.