Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session P21: Semiconductors and Quantum Dots for Energy Applications
2:30 PM–5:30 PM,
Wednesday, March 4, 2020
Room: 302
Sponsoring
Unit:
GERA
Chair: Robert Kaplar, Sandia National Laboratories
Abstract: P21.00009 : Injection-dependent non-radiative SRH recombination via interstitials and dislocations in multicrystalline Si*
View Presentation Abstract
Presenter:
Andrey Semichaevsky
(Lincoln University)
Author:
Andrey Semichaevsky
(Lincoln University)
[1] D. J. Mbewe, D.J. Thomson, R.D. McLeod, H.C. Card, “High-injection conditions at dislocations in silicon: a mechanism for dependence of lifetime on photogeneration rate,” IEEE Trans. on Electron Devices, 31, 5, 523-527 (1984).
[2] J. Schmidt, “Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors,” Appl. Phys. Lett., 82, 2178 (2003).
*The NSF HRD 1505377 grant was used to produce results in this presentation.
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