Extracting spin-orbit coupling strength using realistic device simulations

We do realistic device simulations of semiconductor nanowires and calculate the weak antilocalization correction. We match our numerical simulation to magnetoconductance measurements and accurately extract the spin-orbit coupling strength from experiment. Unlike analytic approaches, our approach considers the electrostatic potential, works for arbitrary wire cross sections, and arbitrary finite mean free paths, including the complicated cross over regime where mean free path is comparable to wire width. After verifying our technique against known analytical results, we extract the spin-orbit coupling strength of semiconductor nanowires produced by selective area growth.