Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session J52: Oxide Films, Surfaces, and Interfaces
2:30 PM–5:18 PM,
Tuesday, March 3, 2020
Room: Mile High Ballroom 1E
Sponsoring
Unit:
DCMP
Chair: Wennie Wang, University of Chicago
Abstract: J52.00010 : Investigation of the thickness-dependent optical properties of ZnO films on Si and SiO2 substrates from the Mid-infrared to the Vacuum-ultraviolet using UV and FTIR spectroscopic ellipsometry*
Presenter:
Nuwanjula Samarasingha Arachchige
(New Mexico State University, Las Cruces, NM, United States.)
Authors:
Nuwanjula Samarasingha Arachchige
(New Mexico State University, Las Cruces, NM, United States.)
Stefan Zollner
(New Mexico State University, Las Cruces, NM, United States.)
Dipayan Pal
(IIT Indore, Indore, India.)
Aakash Mathur
(IIT Indore, Indore, India.)
Ajaib Singh
(IIT Indore, Indore, India.)
Rinki Singh
(IIT Indore, Indore, India.)
Sudeshna Chattopadhyay
(IIT Indore, Indore, India.)
We find that the real and imaginary parts of ε in ZnO films on Si and SiO2 are much smaller than in bulk. Excitonic enhancement, absorption coefficient, and refractive index decrease monotonically with decreasing film thickness. The impact of the excitonic contribution to ε was described by Tanguy [1]. We also fit our ellipsometric spectra by describing the dielectric function of ZnO using the Tanguy model. Also, we investigate the thickness dependence of the Born effective charge, high-frequency and static dielectric constant, and exciton parameters.
References
[1] C. Tanguy, Phys. Rev. Lett. 75, 4090 (1995).
*Supported by NSF (DMR - 1505172)
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