Electron temperature modulation at the 2D electron system in the GaAs/AlGaAs under microwave photoexcitation*

The magnetotransport measurements have been performed on the 2D electron system at GaAs/AlGaAs heterojunctions to understand the influence of the microwave photoexcitation on the spin splitting of the Shubnikov-de Haas oscillations at low temperatures (<1 K). The purpose of the study is to examine the temperature modulation of the electrons under microwave photoexcitation by examining observable spin splitting- and variation thereof under photoexcitation- at high filling factors. In this study, a multicomponent Lifshitz-Kosevevich¹ type function has been applied to describe the magnetotransport data, and relevant results will be presented here.
1. Hu, J. et al. Sci. Rep. 6, 18674; doi: 10.1038/srep18674 (2016).