Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session H71: Poster Session II (2:00pm - 5:00pm)
2:00 PM,
Tuesday, March 3, 2020
Room: Exhibit Hall C/D
Abstract: H71.00030 : Evidence for effects of nitrogen exposure on the Bi2Se3 density of states
Presenter:
Michael Gottschalk
(Michigan State University)
Authors:
Michael Gottschalk
(Michigan State University)
Mal-Soon Lee
(Pacific Northwest National Laboratory)
Eric Goodwin
(Michigan State University)
Thomas Chasapis
(Northwestern University)
Mercouri Kanatzidis
(Northwestern University)
S D Mahanti
(Michigan State University)
Stuart Tessmer
(Michigan State University)
Bi2Se3 is a topological insulator widely used for scientific studies due in part to the ease with which it can be cleaved, exposing a clean surface for study. Typically the materials exhibit n-type doping attributed to selenium vacancies which results in a shift of the Dirac point to between 100 and 300 meV below the Fermi level. Using room temperature scanning tunneling microscopy (STM), we observed evidence for a shift in the expected density of states spectra when crystals first cleaved in a helium gas environment became exposed to ultra high purity N2 gas. The shift brings the Dirac point 50 meV closer to the Fermi level. We will also present density functional theory calculations supporting the picture that nitrogen can bind to the selenium vacancies and shift the density of states. Finally, we will present data showing the time scale over which the exposure occurs.
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