2D Memory Physics and Applications*

This work presents the latest research progress on the atomic-level details of non-volatile resistance switching (NVRS) in 2D memory devices, otherwise known as atomristors. In particular, we will focus on memory characteristics and atomistic imaging and transport studies, together with the first principle calculations to elucidate the underlying physics. These studies provide one to one correlation between the structural and electronic properties of defects and their role in the resistance switching mechanism. Applications from information storage to RF communication to neuromorphic computing will be highlighted.