Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session G27: Electronic Structure: Thermodynamic & Optical Properties
11:15 AM–2:15 PM,
Tuesday, March 3, 2020
Room: 404
Sponsoring
Unit:
FIAP
Chair: James Heyman, Macalester Coll
Abstract: G27.00012 : Exploration of Free Carrier Relaxation Dynamics in Bulk Gallium Arsenide*
Presenter:
Adam Halaoui
(Univ of Denver)
Authors:
Adam Halaoui
(Univ of Denver)
Geoffrey Diederich
(Univ of Denver)
Mark Siemens
(Univ of Denver)
Here, we present MDCS spectra of bulk gallium arsenide (GaAs) showing strain-induced separation of the heavy-hole and light-hole exciton states1, exciton formation from free carriers across a broad energy distribution, and relaxation from GaAs quantum wells in the same sample. The spectra clearly show the Sommerfeld enhancement of the free carrier absorption at long times, while early times show a transient feature related to the fast relaxation of states near the band-edge. We suspect that this transient feature is caused by correlated free carrier pairs or higher-lying excitonic states that form a quasi-continuum near the band edge.
[1] Wilmer et. al., Phys. Rev. B, 94, 2016.
*We acknowledge the financial support of the National Science Foundation
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