films

In this talk, we present our recent study of radical-based molecular beam epitaxy (MBE) growth, and controlled doping in coherent, epitaxial n-doped SrSnO₃/GdScO₃ (001) films using La and Nd as dopants. By combining detailed growth, structural characterizations, secondary ion mass spectroscopy (SIMS) and temperature-dependent magnetotransport measurements, we show films with one-to-one correlation between dopant and activated carrier concentration. Carrier density exceeding 1 × 10²⁰ cm⁻³ was achieved in doped SrSnO₃ films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm² V⁻¹s⁻¹ at 1 × 10²⁰ cm⁻³ was obtained in a 12 nm La-doped SrSnO₃ film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm² V⁻¹s⁻¹ at room temperature. We discuss the structure - dopant - scattering mechanisms - transport property relationships, providing essential knowledge for the design of electronic devices using these materials.