Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session T70: Poster Session III(1:00pm-4:00pm)
1:00 PM,
Thursday, March 7, 2019
BCEC
Room: Exhibit Hall
Abstract: T70.00382 : Valley splitting in a van der Waals heterostructure WSe2/CrI3: A first-principles study*
Presenter:
Zhiya Zhang
(National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University)
Authors:
Zhiya Zhang
(National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University)
Xiaojuan Ni
(Department of Materials Science and Engineering, University of Utah)
Huaqing Huang
(Department of Materials Science and Engineering, University of Utah)
Lin Hu
(Department of Materials Science and Engineering, University of Utah)
Feng Liu
(Department of Materials Science and Engineering, University of Utah)
Atomically thin transition metal dichalcogenides (TMDs) have been considered as a wonderland for the research of valleytronics. Lifting the ±K valley degeneracy in TMDs has become an important research topic in the field of valleytronics. It is crucial to achieve large valley polarization for the development of valleytronics devices. In this work, we investigate the effects underpinning the ±K valley splitting in a van der Waals heterostructure WSe2/CrI3 based on first-principles calculations. We demonstrate that the stacking configuration affects the valley splitting dramatically and the influencing factors are discussed in details. The findings would further our basic understanding of the substrate effect on the valley degeneracy lifting in TMDs-based heterostructures beyond the WSe2/CrI3 and provide a useful guide to the valleytronic control in realistic applications.
*
We acknowledge financial support from the China NSFC (No. 11874189) and U.S. DOE-BES (No. E-FG02-04ER46148). We also acknowledge DOE-NERSC and CHPC at the University of Utah for providing the computing resources.
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