Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session T70: Poster Session III(1:00pm-4:00pm)
1:00 PM,
Thursday, March 7, 2019
BCEC
Room: Exhibit Hall
Abstract: T70.00150 : Resistance drift of metastable amorphous and crystalline fcc GeSbTe memory devices*
Presenter:
Helena Silva
(University of Connecticut)
Authors:
Helena Silva
(University of Connecticut)
Nafisa Noor
(University of Connecticut)
Shalini Tripathi
(University of Connecticut)
C. Barry Carter
(University of Connecticut)
[1] F. Dirisaglik, G. Bakan, Z. Jurado, S. Muneer, M. Akbulut, J. Rarey, L. Sullivan, M. Wennberg, A. King, L. Zhang, R. Nowak, C. Lam, H. Silva and A. Gokirmak, Nanoscale 7, 16625-16630 (2015).
[2] J. Scoggin, R. Khan, H. Silva, and A. Gokirmak, Appl. Phys. Lett. 112 (19), 193502 (2018).
*This work was supported by NSF under award DMR-1710468. The devices were fabricated at IBM Watson Research Center. The TEM analysis is performed at the CINT, a DOE User Facility operated by Los Alamos and Sandia National Laboratories (DE-AC52-06NA25396 and DE-NA-0003525).
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