Electronic Transport Studies of Boron-Doped Diamond-on-Graphene Heterostructures*

Diamond-on-graphene heterostructures are a promising route for operating novel electronic devices at high temperatures due to their excellent thermal properties. For this purpose, boron-doped diamond thin films were grown in a microwave plasma-assisted chemical vapor deposition (CVD) system on a tantalum substrate which allows us to peel off diamond films [1]. Successive mechanical transfer of the diamond films onto CVD graphene on either Si/SiO₂ or quartz results in our heterostructure devices. We will present current-voltage characteristics as a function of temperature and their tunable gate dependence at specific temperatures. Varying the doping level of boron in the diamond films leads to variations in device behavior. Our latest results will be discussed.

[1] R. Bogdanowicz, M. Ficek, M. Sobaszek, A. Nosek , L. Golunski , J. Karczewski , A.Jaramillo-Botero, W.A. Goddard III , M. Bockrath and T. Ossowski, Growth and isolation of large area boron-doped nanocrystalline diamond sheets: A route towards diamond-graphene heterojunction, Advanced Functional Materials (submitted)