Si-doped Defect in Monolayer Graphene: Magnetic Quantization*

We explore the rich and unique magnetic quantization of Si-doped graphene defect systems for various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hopping integrals, as well as a uniform perpendicular magnetic field . The magnetic quantized Landau levels (LLs) could be classified into four different groups based on the probability distributions and oscillation modes. The magneto-optical selection rules, reflecting the main characteristics of LLs, cover Δn = |n^c-n^v| = 0 and 1. These rules for inter-LL excitations arise from the non-equivalence or equivalence of the and sublattices in a supercell. The spectral intensity can be controlled by oscillator strength using a canonical momentum as well as by density of states using concentration and distribution of doped Si atoms.