Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session S11: Group IV- and III-V-Based Low-Dimensional Semiconductor Heterostructures
11:15 AM–2:15 PM,
Thursday, March 7, 2019
BCEC
Room: 152
Sponsoring
Unit:
DCMP
Chair: John Colton, Brigham Young University
Abstract: S11.00002 : Fabricating shallow 2D systems in GaAs/AlGaAs heterostructures towards the creation of Artificial Graphene
11:27 AM–11:39 AM
Presenter:
Yonatan Ashlea Alava
(School of Physics, University of New South Wales)
Authors:
Yonatan Ashlea Alava
(School of Physics, University of New South Wales)
Oleh Klochan
(School of Physics, University of New South Wales)
Qingwen WANG
(School of Physics, University of New South Wales)
Andreas D. Wieck
(Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum)
Arne Ludwig
(Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum)
Julian Ritzmann
(Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum)
Alex R Hamilton
(School of Physics, University of New South Wales)
Here we present results on the fabrication of 2D systems in accumulation mode heterostructures as shallow as 35 nm. We use aluminium gates grown in-situ in the MBE chamber, to avoid exposing the GaAs surface to air. Surprisingly, we find that the 2D mobility with an ‘in situ’ gate is lower than with an ‘ex situ’ gate. We investigate the density dependence of the mobility to identify the underlying scattering mechanisms behind this observation.
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