Functionalization of hexagonal boron nitride – effect on chemical, morphological, electrical and thermal properties*

Hexagonal boron nitride (h-BN) has gained significant importance in plasmonics and quantum electronics applications. In addition, there is a plethora of theoretical, yet relatively few experimental studies, showing modification of h-BN properties via functionalization, namely through induction of magnetism and band gap engineering.
In this effort we show h-BN films functionalization with three different compounds. Chemical, morphological and structural characterization is performed using X-ray photoelectron spectroscopy, Fourier transform infrared reflection absorption spectroscopy, as well as scanning and transmission electron microscopies. This characterization quantifies the elemental composition changes and shows preferential molecular binding towards the edges of the grains after functionalization. In addition, we perform conductive atomic force microscopy studies and thermal boundary conductance mapping to assess the changes in interfacial thermal properties. All of these characterization methods contribute toward the overarching goal of evaluating the potential of functionalized h-BN for practical applications.