Angle-resolved photoemission spectroscopy on wet-transferred highly oriented MoS2 monolayers on HOPG substrates*

The ability to create a large area of monolayer 2D electronic materials with the same orientation on different substrates will play a very critical role for scalable flatland electronics. It has been shown that highly-oriented monolayer (ML) MoS2 can be grown on a carefully prepared sapphire substrate with nearly full coverage and transferred to different substrates [1]. However, it is still unclear whether such a transfer process will introduce unwanted defects that will affect the electronic structure. Here, we report successful preparation of high quality ML MoS2 transferred to HOPG substrates by using a wet transfer method. With a proper treatment, we reveal detailed electronic band structure using high resolution angle-resolved photoemission spectroscopy. Due to the fact that these MoS2 monolayers are highly oriented and interaction with a substrate is very weak [2], we are able to resolve the electronic band structure clearly including K point band splitting.
[1] Yu, Hua, et al.ACS nano,2017,11(12) [2] Miwa, Jill A., et al. Phys. Rev. Lett. 114, 046802(2015)