Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session K33: Phase Change Materials, Memristors, and Neuromorphic Computing
8:00 AM–11:00 AM,
Wednesday, March 6, 2019
BCEC
Room: 204B
Sponsoring
Unit:
FIAP
Chair: Ali Gokirmak
Abstract: K33.00013 : Synaptic Barristor Based on Phase-Engineered Two-Dimensional Heterostructures
10:24 AM–10:36 AM
Presenter:
Woong Huh
(Korea University)
Authors:
Woong Huh
(Korea University)
Seonghoon Jang
(Korea University)
Jae Yoon Lee
(Korea University)
Donghun Lee
(Korea University)
Jung Min Lee
(Korea University)
Hong-Gyu Park
(Korea University)
Jong Chan Kim
(UNIST)
Hu Young Jeong
(UNIST)
Gunuk Wang
(Korea University)
Chul-Ho Lee
(Korea University)
Here, we report a new class of artificial synaptic architecture, a three-terminal device consisting of a monolithically integrated WOx memristor and a variable-barrier WSe2/graphene Schottky diode, termed as a ‘synaptic barristor’. The device can implement essential synaptic characteristics, such as short-term plasticity and long-term plasticity. Owing to the electrostatically controlled barrier height in the ultrathin vdW heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2−0.5 V. Notably, by electrostatic tuning with a gate terminal, we can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. These capabilities enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks. Our demonstration represents an important step toward highly networked and energy-efficient neuromorphic circuits.
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