heterostructures*

The recent two years have seen a rising interest in the study of interlayer excitons (ILX) in Van der Waals layered materials, where electron-hole pairs are bound together across the interlayer gap. Special attention was drawn to such ILX in heterostructures of semiconductor transition metal dichalcogenides with staggered band alignment such as MoSe₂ and WSe₂. That includes the exploration of their optical properties, lifetime, optical selection rules, spin/valley properties, the influence of crystal alignment (a.k.a the moire pattern), the role of momentum-indirect transition, etc.. The latter subject was also studied for the ILX observed in WSe₂ and MoS₂ heterostructure (Kunstmann et al. Nature Physics, DOI: 10.1038/s41567-018-0123-y ,2018), where the reported ~1.6 eV emission is assigned to such indirect transition. In this talk, I will report on the observation of a different interlayer emission from the same system. Probing its response to different experimental conditions, I will discuss its properties and its origin.