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Several recent reports have indicated the possibility of metal-insulator transition (MIT) in two-dimensional electron systems (2DES), which also includes atomically thick van der Waals layers of two-dimensional (2D) materials such as MoS₂, MoSe₂, ReS₂ etc. In general it appears that alteration of external control parameters such as pressure, charge carrier density etc. can give rise to such phenomenon in these materials. In this regard, this study will demonstrate the possibility of MIT in 2D van der Waals layers of Copper Indium Selenide (CuIn₇Se₁₁). A study of conductivity (σ) of 2D CuIn₇Se₁₁ FET devices (fabricated using flakes exfoliated from crystals grown using chemical vapor transport technique) as a function of temperature (T) and charge carrier density (n_2D) (modulated via electrostatic doping through SiO₂ gate) show strong features of MIT. The observed phenomenon will be discussed in light of existing theoretical models.