Theory of Hyperfine Interactions and Electrically Detected Magnetic Resonance (EDMR) for Phosphorus-Doped Silicon*

EDMR is a useful tool to sensitively study a spin pair’s local environment as well as spin-dependent recombination. Theoretical treatments have focused on resonances originating from differences between g-factors of two recombining spins [1]. Recently hyperfine interactions were included but in a classical manner [2]. We present a theory of EDMR where transitions take place via differences in g-factor or hyperfine interactions. The stochastic Liouville formalism is suited to account for hyperfine interactions involving multiple nuclei where each nuclear spin is a quantum spin. For a single spin-1/2 nucleus, expressions for resonances at any field are determined and agree with most measured resonances in phosphorous-doped silicon [3]. Comparisons between the model and observations lead to new understandings of the defect-induced recombination pathways.


[1] Limes et al., Phys. Rev. B 87, 165204 (2013)
[2] Mkhitaryan et al., Phys. Rev. B 97, 035402 (2018)
[3] Morishita et al., Phys. Rev. B 80, 205206 (2009)